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Position: Home > Articles > Ar ion beam etching analysis of pesticide residue boundary layer for apple cuticle basing on XPS Journal of Northeast Agricultural University 2010,41 (5) 131-134

基于XPS的苹果表皮残留农药界面层的氩刻分析

作  者:
张欣艳;赵达;王乐新;王畅
单  位:
黑龙江八一农垦大学文理学院
关键词:
苹果表皮;XPS;残留农药;深度分析
摘  要:
针对果皮表面残留农药进行微观深度探测及分析。结果表明,苹果表皮氧乐果及敌敌畏随施药浓度及施药时间的残留沿纵向深度变化呈现非线性规律性,主要残留部位为果实表皮的角质层区距表面8μm,氧乐果残留分布的规律性强于敌敌畏。
译  名:
Ar ion beam etching analysis of pesticide residue boundary layer for apple cuticle basing on XPS
作  者:
ZHANG Xinyan,ZHAO Da,WANG Lexin,WANG Chang(College of Art and Sciences,Heilongjiang Bayi Agricultural University,Daqing Heilongjiang 163319,China)
关键词:
apple cuticle;XPS;pesticide residue;in-depth analysis
摘  要:
Pesticide residues of apple cuticle were detected and analyzed through micro-depth probe.Results showed that the omethoate and the dichlorvos on apple cuticle showed a non-linear regularity along vertical depth with the volume and time pesticide application.The major parts of residues were stratum corneum and they were 8 μm inside from the apple surface.Residues distribution of the omethoate was more regular than that of the dichlorvos.

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