Position: Home > Articles > THE COMPARATIVE STUDY OF THE EFFECTS OF PHOSPHORUS GETTERING ON PLRYSTALLINE SILICON MINORITY CARRIER LIFETIME
Journal of Inner Mongolia Agricultural University(Natural Science Edition)
2013
(5)
104-106
磷吸杂对多晶硅少子寿命影响的比较研究
作 者：
陈炜;高岗强
单 位：
内蒙古机电职业技术学院
关键词：
磷吸杂;多晶硅;少子寿命
摘 要：
用微波光电导衰减仪(μ-PCD)研究了不同温度和时间的磷吸杂处理对铸造法多晶硅片和冶金法多晶硅片少子寿命的影响。实验发现:冶金法多晶硅片吸杂的效果明显优于铸造法多晶硅片吸杂,特别是在高温吸杂时,冶金法多晶硅片的少子寿命仍保持较高值。磷吸杂温度和吸杂时间对铸造法多晶硅片和冶金法多晶硅片的少子寿命影响规律不一样。
译 名：
THE COMPARATIVE STUDY OF THE EFFECTS OF PHOSPHORUS GETTERING ON PLRYSTALLINE SILICON MINORITY CARRIER LIFETIME
作 者：
CHEN Wei;GAO Gang-qiang;Inner Mongolia Technical College of Mechanics and Electrics;
关键词：
Phosphorus gettering;;polycrystalline silicon;;minority carrier lifetime
摘 要：
With the microwave photoconductivity decay instrument( μ-PCD),it is studied at different temperature and time of phosphorus gettering treatments on casting polycrystalline silicon films and metallurgical process of polycrystalline silicon film minority carrier lifetime effects. It is obviously that Metallurgy polycrystalline silicon wafer gettering effect better than casting polycrystalline silicon wafer gettering. Especially in high temperature gettering,metallurgy polycrystalline silicon films minority carrier lifetime,still maintain higher value. Phosphorus gettering temperature and time on casting polycrystalline silicon films and metallurgical process of polycrystalline silicon film of minority carrier lifetime influence law of different.
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