Position: Home > Articles > Effects of annealing on the structure and optical property of indium-doped ZnO thin films
Journal of Fujian Agriculture and Forestry University(Natural Science Edition)
2012,41
(6)
92-96
退火对掺铟氧化锌薄膜结构及光学性能的影响
作 者：
吴义炳;刘银春;张洪
单 位：
福建农林大学机电工程学院
关键词：
掺铟氧化锌;溶胶-凝胶法;半高宽;光学带隙
摘 要：
采用溶胶-凝胶法在石英衬底上制备掺铟氧化锌薄膜,研究不同退火温度对薄膜结构及发光性能的影响.结果表明,掺铟氧化锌薄膜仍为六角纤锌矿结构的ZnO相,在大于450 nm的波段薄膜样品的透射率都较高;随着退火温度的升高,透射率先增后减,600℃时达到最大;薄膜样品的光学带隙都小于纯ZnO的理论值(3.37 eV),且随退火温度的升高呈先减后增趋势;样品的结晶度与发光强度随着退火温度的升高而增强.
译 名：
Effects of annealing on the structure and optical property of indium-doped ZnO thin films
作 者：
WU Yi-bing,LIU Yin-chun,ZHANG Hong(College of Mechanical and Electronic Engineering,Fujian Agriculture and Forestry University,Fuzhou,Fujian 350002,China)
关键词：
indium-doped ZnO;sol-gel method;full width at half maximum;optical band-gap
摘 要：
Indium-doped ZnO thin films were prepared on quartz substrates by using sol-gel method,the results were as follows: indium-doped ZnO thin films exhibited a hexagonal wurtzite ZnO phase structure;in the wavelength of above 450 nm,thin films showed high optical transmittance which was related to the annealing temperature of samples;optical transmittance of thin films firstly increased,reached the maximum vaule under sample annealing temperature of 600 ℃,then decreased.The band gaps of all samples were lower than the theoretical value of pure ZnO(3.37 eV).With the increase of annealing temperature the band gaps of samples first decreased and then increased.The degree of crystallinity and the luminous intensity of the sample increased with the increase of annealing temperature.
导出引用
计量
文章访问数: 18
HTML全文浏览量: 0
PDF下载量: 0
所属期刊
